r07ds0903ej0100 rev.1.00 page 1 of 7 nov 01, 2012 target specifications datasheet rjf0612dpe 60v - 50a - n channel thermal fet power switching description this fet has the over temperature shut-down capability sensin g to the junction temperature. this fet has the built-in over temperature shut-down circuit in the gate area. and this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. features ? logic level operation (4 v gate drive). ? built-in the over temperature shut-down circuit. ? high endurance capability against to the short circuit. ? latch type shut down operation (need 0 voltage recovery). ? built-in the current limitation circuit. ? power supply voltage applies 12 v and 24 v. ? for industrial applications outline renesas package code: prss0004ae-b (package name: ldpak (s)-(1) ) 1 2 3 4 1. gate 2. drain 3. source 4. drain d s gate resistor current limitation circuit temperature sensing circuit latch circuit gate shut-down circuit g absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 16 v gate to source voltage v gss ?2.5 v drain current i d note3 50 a body-drain diode reverse drain current i dr 50 a avalanche current i ap note 2 15 a avalanche energy e ar note 2 964 mj channel dissipation pch note 1 100 w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. value at tc = 25 ?c 2. tch = 25 ?c, rg ? 50 ? 3. it provides by the current limitation lower bound value. r07ds0903ej0100 rev.1.00 nov 01, 2012
rjf0612dpe target specifications r07ds0903ej0100 rev.1.00 page 2 of 7 nov 01, 2012 typical operation characteristics (ta = 25c) item symbol min typ max unit test conditions v ih 3.5 ? ? v input voltage v il ? ? 1.2 v i ih1 ? ? 100 ? a vi = 8 v, v ds = 0 i ih2 ? ? 50 ? a vi = 3.5 v, v ds = 0 input current (gate non shut down) i il ? ? 1 ? a vi = 1.2 v, v ds = 0 i ih(sd)1 ? 0.8 ? ma vi = 8 v, v ds = 0 input current (gate shut down) i ih(sd)2 ? 0.35 ? ma vi = 3.5 v, v ds = 0 shut down temperature tsd ? 175 ? ? c channel temperature gate operation voltage vop 3.5 ? 12 v drain current (current limitation value) i d limt 50 ? ? a v gs = 5 v, v ds = 10 v note 4 notes: 4. pulse test electrical characteristics (ta = 25c) item symbol min typ max unit test conditions i d1 ? ? 170 a v gs = 3.5 v, v ds = 10 v note 5 i d2 ? ? 10 ma v gs = 1.2 v, v ds = 10 v drain current i d3 50 ? ? a v gs = 5 v, v ds = 10 v note 5 drain to source breakdown voltage v (br)dss 60 ? ? v i d = 10 ma, v gs = 0 v (br)gss 16 ? ? v i g = 800 ? a, v ds = 0 gate to source breakdown voltage v (br)gss ?2.5 ? ? v i g = ?100 ? a, v ds = 0 i gss1 ? ? 100 ? a v gs = 8 v, v ds = 0 i gss2 ? ? 50 ? a v gs = 3.5 v, v ds = 0 i gss3 ? ? 1 ? a v gs = 1.2 v, v ds = 0 gate to source leak current i gss4 ? ? ?100 ? a v gs = ?2.4 v, v ds = 0 i gs(op)1 ? 0.8 ? ma v gs = 8 v, v ds = 0 input current (shut down) i gs(op)2 ? 0.35 ? ma v gs = 3.5 v, v ds = 0 zero gate voltage drain current i dss ? ? 10 ? a v ds = 32 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.1 ? 2.1 v v ds = 10 v, i d = 1 ma forward transfer admittance |y fs | 26 30 ? s i d = 25 a, v ds = 10 v note 5 r ds(on) ? 7.8 10 m ? i d = 25 a, v gs = 4 v note 5 static drain to source on state resistance r ds(on) ? 5.9 7.5 m ? i d = 25 a, v gs = 10 v note 5 output capacitance coss ? 1974 ? pf v ds = 10 v, v gs = 0, f = 1mhz turn-on delay time t d(on) ? 14.0 ? ? s rise time t r ? 63.2 ? ? s turn-off delay time t d(off) ? 57.4 ? ? s fall time t f ? 84.5 ? ? s v gs = 5 v, i d = 25 a, r l = 1.2 ? body-drain diode forward voltage v df ? 0.9 ? v i f = 50 a, v gs = 0 body-drain diode reverse recovery time t rr ? 112 ? ns i f = 50 a, v gs = 0 di f /dt = 50 a/? s t os1 ? 0.5 ? ms v gs = 5 v, v dd = 16 v over load shut down operation time note 6 t os2 ? 0.36 ? ms v gs = 5 v, v dd = 24 v notes: 5. pulse test 6. including the junction temperature rise of the over loaded condition.
rjf0612dpe target specifications r07ds0903ej0100 rev.1.00 page 3 of 7 nov 01, 2012 main characteristics 100 1000 10 1 0.1 0.1 1 10 100 ta = 25c drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 200 150 100 50 0 246810 v gs = 3.5 v 4.0 v 4.5 v drain to source voltage v ds (v) drain current i d (a) typical output characteristics 50 40 30 20 10 02 14 35 gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics tc = 75c 25c 400 300 200 100 0246810 5 a 10 a i d = 25 a gate to source voltage v gs (v) drain to saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (mv) 1000 1 10 100 10 100 1 drain current i d (a) drain source on sate resistance r ds(on) (m) static drain to source state resistance vs. drain current v gs = 10 v 4 v 200 150 100 50 0 50 100 150 200 channel dissipation pch (w) case temperature tc (c) power vs. temperature derating 1 ms pw = 10 ms dc operation (tc = 25c) 7.0 v 10 v 5.0 v pulse test v ds = 10 v pulse test pulse test pulse test thermal shut down operation area operation in this area is limited by r ds(on)
rjf0612dpe target specifications r07ds0903ej0100 rev.1.00 page 4 of 7 nov 01, 2012 14 12 10 8 6 4 -50 -25 0 25 50 75 100 125 150 2 case temperature tc (c) static drain to source on state resistance r ds (on) (m) static drain to source on state resistance vs. temperature 1000 10 100 1 0.1 0.1 1 10 100 drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |y fs | (s) v gs = 10 v v gs = 4 v 0.1 1 10 100 1000 100 10 di / dt = 50 a / s v gs = 0, ta = 25 c reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time 0.1 1 10 100 t r 1000 100 10 1 v gs = 10 v, v dd = 30 v pw = 300 s, duty 1% t f t d(on) t d(off) drain current i d (a) switching time t (s) switching characteristics 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage i d = 25, 10 a i d = 25 a 5 a 5 a 10 a tc = 25c 75c v gs = 0 v 5 v pulse test pulse test v ds = 10 v pulse test 10000 1000 100 0 10203040 60 50 v gs = 0 f = 1 mhz coss
rjf0612dpe target specifications r07ds0903ej0100 rev.1.00 page 5 of 7 nov 01, 2012 16 10 12 8 14 6 4 2 0 gate to source voltage v gs (v) gate to source voltage vs. shutdown time of load-short test 10000 shutdown time of load-short test pw ( s) 200 180 160 140 120 0 gate to source voltage v gs (v) shutdown case temperature tc (c) 100 246 810 i d = 5 a shutdown case temperature vs. gate to source voltage 100 1000 v dd = 16 v 24 v 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch- c(t) = s (t) ? ch- c ch- c = 1.25c/w, tc = 25 c tc = 25c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width
rjf0612dpe target specifications r07ds0903ej0100 rev.1.00 page 6 of 7 nov 01, 2012 d. u. t rg i ap monitor v ds monitor v dd 50 vin 10 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v (br)dss v (br)dss ? v dd avalanche test circuit avalanche waveform vin monitor d.u.t. vin 10v r l v dd = 30 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 50 90% 10% t f switching time test circuit waveform
rjf0612dpe target specifications r07ds0903ej0100 rev.1.00 page 7 of 7 nov 01, 2012 package dimensions 10.2 0.3 1.37 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 3.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 sc-83 1.30g mass[typ.] ldpak(s)-(1) / ldpak(s)-(1)v prss0004ae-b renesas code jeita package code previous code unit: mm package name ldpak(s)-(1) ordering information orderable part number quan tity shipping container RJF0612DPE-00-J3 1000 pcs taping note: the symbol of 2nd "-" is occasionally presented as "#".
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. htt p ://www.renesas.co m refer to "htt p ://www.renesas.com/" for the latest and detailed information . r e n esas el ec tr o ni cs am e ri ca in c . 2880 scott boulevard santa clara , ca 95050-2554 , u.s.a . tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-651-700, fax: +44-1628-651-804 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics mala y sia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petalin g jaya, selan g or darul ehsan, malaysi a tel: +60-3-7955-9390 , fax: +60-3-7955-951 0 renesas electronics korea co. , ltd . 11f., samik lavied' or bld g ., 720-2 yeoksam-don g , kan g nam-ku, seoul 135-080, korea tel: +82-2-558-3737 , fax: +82-2-558-514 1 s ale s o ffi c e s ? 2012 renesas electronics corporation. all ri g hts reserved . colo p hon 2.2
|
